Manufacturer Part Number
PMBTA06,215
Manufacturer
Nexperia
Introduction
NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Automotive-qualified to AEC-Q101 standard
TO-236AB (SC-59) surface-mount package
Power rating of 250 mW
Collector-emitter breakdown voltage of 80 V
Collector current up to 500 mA
Collector cutoff current of 50 nA
Saturation voltage of 250 mV @ 10 mA, 100 mA
DC current gain of 100 @ 100 mA, 1 V
Transition frequency of 100 MHz
Product Advantages
Suitable for automotive and industrial applications
Compact surface-mount package
High power handling capacity
Robust performance characteristics
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 80 V
Current Collector (Ic) (Max): 500 mA
Current Collector Cutoff (Max): 50 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 10 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 1 V
Frequency Transition: 100 MHz
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplification circuits
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
Automotive-grade quality and reliability
Compact surface-mount package
High power handling and performance capabilities
Robust technical specifications
Suitable for a wide range of applications