Manufacturer Part Number
PMBT5551,215
Manufacturer
Nexperia
Introduction
The PMBT5551 is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of applications, including amplifiers, switches, and general-purpose circuits.
Product Features and Performance
High cutoff frequency of 300 MHz for efficient high-frequency operation
Low collector-emitter saturation voltage for low power consumption
Robust design with high collector-emitter breakdown voltage of 160 V
Capable of handling up to 300 mA of collector current
Product Advantages
Excellent high-frequency performance
Low power consumption
High voltage handling capability
Robust and reliable operation
Key Technical Parameters
Power Rating: 250 mW
Collector-Emitter Breakdown Voltage: 160 V
Collector Current (Max): 300 mA
Collector Cutoff Current (Max): 50 nA
DC Current Gain (hFE): 80 (min) @ 10 mA, 5 V
Transition Frequency: 300 MHz
Quality and Safety Features
RoHS3 compliant
Housed in a compact TO-236AB package
Compatibility
The PMBT5551 is a direct replacement for a wide range of NPN bipolar transistors in similar packages and with similar performance characteristics.
Application Areas
Amplifiers
Switches
General-purpose circuits
High-frequency applications
Product Lifecycle
The PMBT5551 is an active and widely available product. No discontinuation or replacement is currently planned.
Key Reasons to Choose This Product
Excellent high-frequency performance for efficient circuit operation
Low power consumption and high voltage handling capability for energy-efficient designs
Robust and reliable design for long-lasting performance
Compatibility with a wide range of applications and easy integration into existing systems
PMBT6429,215Nexperia