Manufacturer Part Number
PMBT4403,215
Manufacturer
Nexperia
Introduction
Nexperia's PMBT4403 is a PNP bipolar junction transistor (BJT) designed for automotive and industrial applications.
Product Features and Performance
250 mW power dissipation
40 V collector-emitter breakdown voltage
600 mA collector current
50 nA collector-base cutoff current
750 mV collector-emitter saturation voltage at 50 mA, 500 mA collector current
100 minimum DC current gain at 150 mA, 2 V
200 MHz transition frequency
Product Advantages
Automotive-qualified to AEC-Q101 standard
RoHS3 compliant
Surface-mount TO-236AB package
Key Technical Parameters
Power Max: 250 mW
Voltage Collector Emitter Breakdown (Max): 40 V
Current Collector (Ic) (Max): 600 mA
Current Collector Cutoff (Max): 50 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750 mV @ 50 mA, 500 mA
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150 mA, 2 V
Frequency Transition: 200 MHz
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplifier applications
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose This Product
Automotive-qualified for reliable performance
RoHS3 compliance for environmentally-friendly use
Surface-mount package for easy integration
High power handling and low saturation voltage for efficient operation
Wide operating temperature range up to 150°C
High transition frequency for high-speed applications
PMBT4401/ATLUMILEDS