Manufacturer Part Number
PHPT60603PYX
Manufacturer
Nexperia
Introduction
High-performance PNP bipolar junction transistor (BJT) designed for automotive and industrial applications
Product Features and Performance
Capable of handling up to 60V collector-emitter voltage and 3A collector current
High current gain (hFE) of at least 150 at 500mA collector current and 2V collector-emitter voltage
High transition frequency of 110MHz
Low collector-emitter saturation voltage of 225mV at 50mA base current and 1A collector current
Automotive-grade AEC-Q100 qualified
Product Advantages
Robust and reliable performance for demanding automotive and industrial environments
Excellent electrical characteristics enable efficient power switching and amplification
Small surface-mount LFPAK56 and Power-SO8 packages for compact design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 60V
Collector Current (IC): 3A
Collector Cutoff Current (ICBO): 100nA
DC Current Gain (hFE): Minimum 150 @ 500mA, 2V
Quality and Safety Features
RoHS3 compliant
AEC-Q100 qualified for automotive applications
Compatibility
Compatible with various automotive and industrial control systems
Application Areas
Automotive electronics (e.g., power management, motor control)
Industrial control systems (e.g., power supplies, motor drives)
Product Lifecycle
Currently in production
No plans for discontinuation, with ongoing support and availability
Key Reasons to Choose This Product
Robust and reliable performance for demanding applications
Excellent electrical characteristics for efficient power switching and amplification
Small surface-mount package options for compact design
Automotive-grade AEC-Q100 qualification for use in harsh environments
Ongoing availability and support from the manufacturer
PHPT60610NYFreescale / NXP Semiconductors