Manufacturer Part Number
PDTC144ET,215
Manufacturer
Nexperia
Introduction
Bipolar Junction Transistor (BJT), Pre-Biased, NPN
Product Features and Performance
Collector-Emitter Breakdown Voltage (Max): 50V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 1A
Vce Saturation Voltage (Max): 150mV @ 500μA, 10mA
DC Current Gain (hFE) (Min): 80 @ 5mA, 5V
Base Resistor (R1): 47kΩ
Emitter-Base Resistor (R2): 47kΩ
Power Dissipation (Max): 250mW
Product Advantages
Pre-biased configuration for easy use
Compact surface mount package
High current and voltage capability
Key Technical Parameters
Transistor Type: NPN, Pre-Biased
Package: TO-236-3, SC-59, SOT-23-3
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Complies with RoHS3 directive
Reliable Surface Mount package
Compatibility
Can be used in a wide range of electronic circuits and applications.
Application Areas
Amplifiers
Switches
Logic gates
Biasing circuits
Product Lifecycle
Currently in active production. Replacements or upgrades may become available in the future.
Key Reasons to Choose This Product
Pre-biased configuration for easy use
High current and voltage capability
Compact surface mount package
RoHS3 compliant
Reliable and high-quality construction