Manufacturer Part Number
PDTC143ZT,215
Manufacturer
Nexperia
Introduction
High-performance pre-biased NPN bipolar junction transistor (BJT) for automotive and industrial applications
Product Features and Performance
High transition frequency of 230 MHz
Low collector-emitter saturation voltage of 100 mV at 5 mA collector current
Collector current of up to 100 mA
Collector-emitter breakdown voltage of 50 V
Integrated base and emitter resistors for pre-biasing
Product Advantages
Suitable for use in high-frequency switching and amplifier circuits
Reliable performance in harsh automotive and industrial environments
Easy to implement due to pre-biased configuration
Key Technical Parameters
Power rating: 250 mW
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 1 A
DC current gain (hFE): 100 @ 10 mA, 5 V
Transition frequency: 230 MHz
Base resistor: 4.7 kΩ
Emitter-base resistor: 47 kΩ
Quality and Safety Features
RoHS3 compliant
AEC-Q100 qualified for automotive applications
Housed in the compact TO-236AB (SOT-23-3) package
Compatibility
Surface mount package compatible with standard assembly processes
Application Areas
Automotive electronics
Industrial control systems
Switching and amplifier circuits
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High-performance and reliable operation in harsh environments
Easy to implement due to pre-biased configuration
Compact and space-saving package
Automotive and industrial grade quality and safety
