Manufacturer Part Number
PBSS9110T,215
Manufacturer
Nexperia
Introduction
High-performance PNP bipolar junction transistor (BJT) in a small surface-mount package, suitable for high-speed switching and amplifier applications.
Product Features and Performance
Compact TO-236AB (SC-59) surface-mount package
Power rating up to 480 mW
High collector-emitter breakdown voltage up to 100 V
High collector current up to 1 A
Low collector-emitter saturation voltage of 320 mV @ 1 A
High current gain of 150 @ 500 mA, 5 V
Wide operating temperature range up to 150°C
Product Advantages
Robust design for reliable performance
Excellent thermal management
High power efficiency
Key Technical Parameters
Collector-emitter breakdown voltage (max): 100 V
Collector current (max): 1 A
Collector cutoff current (max): 100 nA
Collector-emitter saturation voltage (max): 320 mV @ 1 A
Current gain (min): 150 @ 500 mA, 5 V
Transition frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Suitable for high-speed switching and amplifier applications
Application Areas
Power supplies
Motor controls
Telecommunication equipment
Consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Compact and efficient surface-mount package
High power handling capability
Excellent electrical performance
Robust and reliable design
Wide operating temperature range
RoHS3 compliance for environmental compatibility