PBSS8110T,215 - Nexperia USA Inc.

Manufacturer Part Number

PBSS8110T,215

Manufacturer

Nexperia

Introduction

High-performance NPN bipolar transistor in a small surface-mount package

Product Features and Performance

Low collector-emitter saturation voltage

High current handling capability up to 1 A

High DC current gain of 150 minimum at 250 mA, 10 V

Transition frequency of 100 MHz

480 mW maximum power dissipation

Product Advantages

Compact surface-mount package

Optimized for high-frequency, high-power applications

Robust and reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100 V

Collector Current (IC): 1 A

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 200 mV @ 100 mA, 1 A

DC Current Gain (hFE): 150 minimum @ 250 mA, 10 V

Transition Frequency (fT): 100 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

TO-236-3, SC-59, SOT-23-3 package

Application Areas

High-frequency, high-power amplifiers

Switching circuits

Driver circuits

Power supplies

Product Lifecycle

Active product

No known discontinuation or replacement plans

Key Reasons to Choose This Product

High current handling capability

Excellent high-frequency performance

Low collector-emitter saturation voltage for efficient operation

Robust and reliable in a compact surface-mount package

RoHS3 compliance for environmental responsibility