Manufacturer Part Number
PBSS5580PA,115
Manufacturer
Nexperia
Introduction
PBSS5580PA,115 is a PNP bipolar junction transistor (BJT) from Nexperia, a leading manufacturer of discrete semiconductor products.
Product Features and Performance
High current-carrying capacity up to 4A
High power handling up to 2.1W
High breakdown voltage up to 80V
High transition frequency of 110MHz
Low collector-emitter saturation voltage of 420mV at 200mA, 4A
Product Advantages
Excellent performance for high-power switching and amplification applications
Compact surface-mount package for efficient heat dissipation and space-saving designs
Reliable and robust construction for long-term reliability
Key Technical Parameters
Operating temperature range up to 150°C
Collector-emitter breakdown voltage up to 80V
Collector current up to 4A
Collector cutoff current up to 100nA
DC current gain (hFE) of at least 140 at 2A, 2V
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Proven reliability and quality from a leading semiconductor manufacturer
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high-power PNP transistors
Application Areas
High-power switching and amplification circuits
Power supplies and motor control systems
Industrial and automotive electronics
Product Lifecycle
Currently available, with no plans for discontinuation
Replacement or upgrade options may be available from Nexperia
Key Reasons to Choose
Exceptional performance and power handling capabilities
Compact and efficient surface-mount package
Reliable and robust construction for long-term use
Proven quality and safety from a leading semiconductor manufacturer
Compatibility with a wide range of electronic applications
PBSS5540X/T3LUMILEDS