Manufacturer Part Number
PBSS5240T,215
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Product Features and Performance
RoHS3 Compliant
TO-236AB package
Operating Temperature: 150°C (TJ)
Power Max: 480 mW
Voltage Collector Emitter Breakdown (Max): 40 V
Current Collector (Ic) (Max): 2 A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency Transition: 200MHz
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliant
High power and current handling capability
Low saturation voltage
High frequency operation
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Max: 480 mW
Voltage Collector Emitter Breakdown (Max): 40 V
Current Collector (Ic) (Max): 2 A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency Transition: 200MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Application Areas
Suitable for a wide range of applications requiring high power, high current, and high frequency transistors
Product Lifecycle
Current product, no discontinuation information available
Several Key Reasons to Choose This Product
RoHS3 Compliant
High power and current handling capability
Low saturation voltage
High frequency operation
Suitable for a wide range of applications