Manufacturer Part Number
NX7002BKR
Manufacturer
Nexperia
Introduction
The NX7002BKR is a discrete semiconductor product, specifically a transistor - FET, MOSFET - single device.
Product Features and Performance
RoHS3 compliant
Packaged in a TO-236AB package
Operating temperature range of -55°C to 150°C
Drain-to-source voltage (Vdss) of 60V
Maximum gate-to-source voltage (Vgs) of ±20V
Maximum on-resistance (Rds(on)) of 2.8Ω at 200mA, 10V
MOSFET technology
Continuous drain current (Id) of 270mA at 25°C
Maximum input capacitance (Ciss) of 23.6pF at 10V
Maximum power dissipation of 310mW at Ta, 1.67W at Tc
N-channel FET type
Maximum gate-to-source threshold voltage (Vgs(th)) of 2.1V at 250μA
Drive voltage range of 5V to 10V
Maximum gate charge (Qg) of 1nC at 10V
Surface mount package
Product Advantages
Compact and efficient power management
Suitable for a wide range of operating temperatures
Reliable and durable performance
Versatile application capabilities
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs) range: ±20V
On-resistance (Rds(on)): 2.8Ω @ 200mA, 10V
Continuous drain current (Id): 270mA @ 25°C
Input capacitance (Ciss): 23.6pF @ 10V
Power dissipation: 310mW @ Ta, 1.67W @ Tc
Gate-to-source threshold voltage (Vgs(th)): 2.1V @ 250μA
Gate charge (Qg): 1nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Suitable for a wide range of operating temperatures
Compatibility
Surface mount package (TO-236AB)
Suitable for various electronic circuits and applications
Application Areas
Power management circuits
Switching circuits
Amplifier circuits
General electronic applications
Product Lifecycle
Current product offering
No information on discontinuation or replacements
Key Reasons to Choose This Product
Compact and efficient power management capabilities
Wide operating temperature range
Reliable and durable performance
Versatile application capabilities
RoHS3 compliance for environmental responsibility