Manufacturer Part Number
BUK7M17-80EX
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET transistor
Designed for automotive and industrial applications
Product Features and Performance
Drain to Source Voltage (Vdss) of 80V
Vgs (Max) of ±20V
Low on-resistance Rds(on) of 17mOhm @ 10A, 10V
Continuous Drain Current (Id) of 43A at 25°C
Input Capacitance (Ciss) of 2031 pF @ 25 V
Power Dissipation (Max) of 79W at Tc
Vgs(th) (Max) of 4V @ 1mA
Gate Charge (Qg) of 29.6 nC @ 10 V
Product Advantages
Excellent thermal management
High power density
Robust design for harsh environments
Suitable for high-frequency switching applications
Key Technical Parameters
MOSFET (Metal Oxide) technology
N-Channel FET type
Surface mount package (LFPAK33)
Operational temperature range of -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Tape and reel packaging
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Switching circuits
Product Lifecycle
Currently available
No discontinuation plans
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent thermal performance and power handling capacity
Robust design for harsh environments
Suitable for high-frequency switching applications
Automotive and industrial grade quality and reliability
Compatibility with a wide range of applications
BUK7L3R3-34BRCFreescale / NXP Semiconductors