BSH205G2R - Nexperia USA Inc.

Manufacturer Part Number

BSH205G2R

Manufacturer

Nexperia

Introduction

The BSH205G2R is a P-channel power MOSFET transistor manufactured by Nexperia. It is designed for use in automotive and other industrial applications.

Product Features and Performance

P-channel MOSFET with a drain-to-source voltage (Vdss) of 20V

Low on-resistance (Rds(on)) of 170mΩ at 2A, 4.5V

Continuous drain current (Id) of 2A at 25°C

Input capacitance (Ciss) of 418pF at 10V

Power dissipation of 480mW at 25°C

Operating temperature range of -55°C to 150°C

Product Advantages

High efficiency and low power consumption

Excellent thermal performance

Suitable for automotive and industrial applications

Compliant with RoHS 3 directive

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs max): ±8V

On-Resistance (Rds(on) max): 170mΩ @ 2A, 4.5V

Threshold Voltage (Vgs(th) max): 950mV @ 250μA

Input Capacitance (Ciss max): 418pF @ 10V

Gate Charge (Qg max): 6.5nC @ 4.5V

Quality and Safety Features

AEC-Q100 qualified for automotive applications

RoHS 3 compliant

Compatibility

TO-236-3, SC-59, SOT-23-3 package

Suitable for surface mount assembly

Application Areas

Automotive electronics

Industrial power supplies

Motor control

Battery management systems

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgrade options may be available from Nexperia or other manufacturers.

Key Reasons to Choose This Product

High efficiency and low power consumption for improved energy efficiency in applications.

Excellent thermal performance and wide operating temperature range for reliable operation in demanding environments.

Automotive and industrial qualification for use in a variety of applications.

Compact and surface-mountable package for space-constrained designs.

Availability of replacement or upgrade options from the manufacturer or other sources.