BSH105,215 - Nexperia USA Inc.

Manufacturer Part Number

BSH105,215

Manufacturer

Nexperia

Introduction

The BSH105,215 are N-channel enhancement-mode field-effect transistors (FETs) in a TO-236AB (SOT-23) surface-mount package.

Product Features and Performance

N-channel MOSFET with low on-resistance and fast switching

Optimized for use as switching devices in DC-to-DC converters, load switches, and similar applications

Excellent thermal resistance for efficient power dissipation

Extremely low gate charge for fast switching

Low output capacitance for high-frequency operation

Product Advantages

Compact surface-mount package

Low on-resistance for efficient power conversion

Fast switching for high-frequency applications

Excellent thermal performance for power dissipation

Key Technical Parameters

Drain-to-Source Voltage (Vds): 20V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 200mΩ @ 600mA, 4.5V

Continuous Drain Current (Id): 1.05A @ 25°C

Input Capacitance (Ciss): 152pF @ 16V

Power Dissipation (Pd): 417mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term operation

Compatibility

Compatible with common MOSFET driver circuits and control systems

Application Areas

DC-to-DC converters

Load switching

Power management circuits

General-purpose switching applications

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact surface-mount package for space-constrained designs

Low on-resistance for efficient power conversion

Fast switching for high-frequency applications

Excellent thermal performance for reliable operation under high power

RoHS3 compliance for use in a wide range of applications