Manufacturer Part Number
BCM847BV,115
Manufacturer
Nexperia
Introduction
The BCM847BV,115 is a dual NPN bipolar junction transistor (BJT) array from Nexperia, designed for a variety of general-purpose amplification and switching applications.
Product Features and Performance
2 NPN transistors in a single package
Matched transistor pair for improved performance
High frequency capability up to 250 MHz
Low collector-emitter saturation voltage (Vce(sat)) of 400 mV at 5 mA, 100 mA
High DC current gain (hFE) of 200 minimum at 2 mA, 5 V
Product Advantages
Space-saving surface mount package
Robust design for reliable operation
Excellent thermal management
Suitable for a wide range of applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 15 nA
Power Dissipation: 300 mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO-certified facilities
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of electronic circuits and devices
Can be used in amplifiers, switches, and other general-purpose applications
Application Areas
Audio amplifiers
Switches
Biasing circuits
Logic gates
General-purpose amplification
Product Lifecycle
The BCM847BV,115 is an active product, with no plans for discontinuation. Replacement or upgrade options are available from Nexperia.
Key Reasons to Choose This Product
Dual NPN transistors in a small surface mount package
Excellent high-frequency performance up to 250 MHz
Low saturation voltage for efficient operation
High DC current gain for reliable amplification
Robust design and wide temperature range for versatile applications
RoHS3 compliance and high-quality manufacturing for environmental responsibility
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