BFR92ALT1 - Microsemi Corporation

Manufacturer Part Number

BFR92ALT1

Manufacturer

Microsemi

Introduction

High-frequency silicon npn bipolar junction transistor (BJT)

Designed for RF and high-frequency amplifier applications

Product Features and Performance

Capable of operating at frequencies up to 4.5GHz

Low noise figure of 3dB typical at 500MHz

High current gain of 40 minimum at 14mA, 10V

Product Advantages

Excellent high-frequency performance

Low noise characteristics

Surface mount packaging for compact designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 15V

Collector Current (max): 25mA

Power Dissipation (max): 273mW

Operating Temperature Range: -55°C to +150°C

Quality and Safety Features

Manufactured using Microsemi's high-quality semiconductor processes

Reliable and durable performance

Compatibility

Suitable for use in RF and high-frequency amplifier circuits

Compatible with surface mount assembly processes

Application Areas

Radio frequency (RF) amplifiers

Wireless communication devices

High-frequency instrumentation

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgraded models may become available in the future

Key Reasons to Choose

Excellent high-frequency performance up to 4.5GHz

Low noise figure for improved signal-to-noise ratio

High current gain for efficient amplifier designs

Surface mount packaging for compact circuit integration

Reliable and durable performance from a reputable manufacturer