Manufacturer Part Number
APTGF250DA60D3G
Manufacturer
Microsemi
Introduction
Microsemi's APTGF250DA60D3G is a high-power discrete semiconductor product, specifically a Transistor - IGBT (Insulated Gate Bipolar Transistor) Module.
Product Features and Performance
Power Rating: 1250 W
IGBT Type: NPT (Non-Punch-Through)
Input: Standard
Configuration: Single
Input Capacitance (Cies): 13 nF @ 25 V
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Ic) (Max): 400 A
Collector-Emitter Saturation Voltage (Vce(on)) (Max): 2.45 V @ 15 V, 300 A
Collector Cutoff Current (Max): 500 A
Product Advantages
Robust and reliable performance
High power handling capability
Efficient power conversion
Key Technical Parameters
Power Rating: 1250 W
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Ic) (Max): 400 A
Collector-Emitter Saturation Voltage (Vce(on)) (Max): 2.45 V @ 15 V, 300 A
Quality and Safety Features
Chassis Mount Packaging
No NTC Thermistor
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power Conversion
Motor Control
Inverters
Welding Equipment
Industrial Equipment
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Microsemi.
Key Reasons to Choose This Product
High power handling capability
Efficient performance with low collector-emitter saturation voltage
Robust and reliable design
Compatibility with a variety of power electronics applications
