Manufacturer Part Number
APTC90AM60SCTG
Manufacturer
Microsemi
Introduction
High-performance MOSFET transistor array with enhanced power efficiency and reliability for various power conversion applications.
Product Features and Performance
2 N-Channel (Half Bridge) configuration
900V drain-to-source voltage rating
Extremely low on-resistance of 60mΩ
High current capacity of 59A continuous drain current
Reduced input capacitance of 13,600pF
Super Junction technology for improved efficiency
Wide operating temperature range of -40°C to 150°C
Product Advantages
Excellent power density and efficiency
Robust and reliable performance
Suitable for high-voltage, high-current applications
Easy integration into power conversion systems
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
On-Resistance (Rds(on)): 60mΩ
Continuous Drain Current (Id): 59A
Input Capacitance (Ciss): 13,600pF
Gate Threshold Voltage (Vgs(th)): 3.5V
Gate Charge (Qg): 540nC
Quality and Safety Features
Compliant with industry safety and reliability standards
Rigorous quality control and testing procedures
Compatibility
Suitable for various power conversion applications, such as power supplies, motor drives, and renewable energy systems
Application Areas
High-voltage, high-current power conversion
Switching power supplies
Motor drives
Renewable energy systems
Industrial and commercial equipment
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Exceptional power efficiency and performance due to advanced Super Junction technology
Robust and reliable operation across a wide temperature range
High current handling capability and low on-resistance for high-power applications
Reduced input capacitance for improved switching efficiency
Easy integration into power conversion systems with the available package and mounting options
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