Manufacturer Part Number
APT8018JN
Manufacturer
Microsemi
Introduction
High voltage N-channel enhancement mode power MOSFET
Product Features and Performance
Ultra-low on-resistance
High speed switching
Extremely low gate charge
High voltage operation up to 800V
High current handling capability up to 40A
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Suitable for high voltage and high power applications
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 180mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 14000pF @ 25V
Power Dissipation (Pd): 690W @ Tc
Quality and Safety Features
MOSFET technology for reliable and stable performance
ISOTOP package for improved thermal dissipation
Complies with industry safety and quality standards
Compatibility
Suitable for a wide range of high voltage, high power applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Industrial automation and control
Renewable energy systems
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available from Microsemi
Key Reasons to Choose This Product
Exceptional efficiency and thermal performance
High voltage and current handling capabilities
Robust and reliable design for demanding applications
Ease of integration and compatibility with various systems
Ongoing product support and availability from Microsemi
APT8014JFLLAPTIGBT Module
APT8015JNMicrosemiIGBT Module