Manufacturer Part Number
APT6030BN
Manufacturer
Microsemi
Introduction
The APT6030BN is a high-performance N-channel MOSFET transistor designed for use in power switching applications.
Product Features and Performance
600V drain-to-source voltage rating
300mΩ maximum on-resistance at 11.5A, 10V
23A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 210nC at 10V
Optimized for fast switching and low switching losses
Rugged and reliable design
Product Advantages
Excellent efficiency and thermal performance
Highly reliable and long-lasting operation
Suitable for a wide range of high-power applications
Easy to integrate and use in power electronics designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 300mΩ @ 11.5A, 10V
Drain Current (Id): 23A @ 25°C
Input Capacitance (Ciss): 3500pF @ 25V
Power Dissipation (Pd): 360W @ Tc
Quality and Safety Features
Robust TO-247-3 package design
Excellent thermal management capabilities
Complies with relevant safety and regulatory standards
Compatibility
Suitable for use in a wide range of power electronics applications, including motor drives, power supplies, and industrial automation systems.
Application Areas
Power switching and conversion
Motor control
Industrial automation
Renewable energy systems
Medical equipment
Aerospace and defense applications
Product Lifecycle
The APT6030BN is an active and widely available product from Microsemi. There are no immediate plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose this Product
Excellent performance and efficiency
Robust and reliable design for long-lasting operation
Wide operating temperature range for versatile applications
Easy integration and compatibility with a variety of power electronics systems
Backed by Microsemi's reputation for high-quality semiconductor products
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