Manufacturer Part Number
APT5012JN
Manufacturer
Microsemi
Introduction
High voltage N-channel power MOSFET
Part of the POWER MOS IV series
Product Features and Performance
Optimized for high power, high voltage applications
Capable of handling up to 500V drain-to-source voltage
Low on-resistance of 120mOhm @ 21.5A, 10V
Capable of continuous drain current up to 43A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High voltage operation
Low on-resistance for efficient power conversion
Suited for high power, high voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 120mOhm
Continuous Drain Current (Id): 43A
Input Capacitance (Ciss): 6500pF
Power Dissipation: 520W
Quality and Safety Features
MOSFET technology for reliable performance
ISOTOP package for improved thermal management
Chassis mount design for secure installation
Compatibility
Suitable for a variety of high power, high voltage applications
Application Areas
Power converters
Motor drives
Induction heating
Welding equipment
Industrial automation
Product Lifecycle
This product is an active and continuously available part from Microsemi.
Key Reasons to Choose This Product
Excellent power handling capability with 500V voltage rating
Low on-resistance for efficient power conversion
High continuous drain current of 43A
Wide operating temperature range of -55°C to 150°C
Reliable MOSFET technology and ISOTOP package design
Compatibility with a variety of high power, high voltage applications
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