APT40M75JN - Microsemi Corporation

Manufacturer Part Number

APT40M75JN

Manufacturer

Microsemi

Introduction

High-performance N-channel power MOSFET transistor

Product Features and Performance

Optimized for high-frequency switch-mode power supply applications

Extremely low on-state resistance (RDS(on))

Low gate charge (Qg) for high-speed switching

High drain-to-source breakdown voltage (VDS)

Wide operating temperature range (-55°C to 150°C)

Product Advantages

Excellent efficiency and thermal performance

Reliable and robust design

Suitable for high-power, high-frequency applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 400 V

Maximum Gate-to-Source Voltage (VGS): ±30 V

On-State Resistance (RDS(on)): 75 mΩ @ 28 A, 10 V

Continuous Drain Current (ID): 56 A (at 25°C)

Input Capacitance (Ciss): 6800 pF @ 25 V

Power Dissipation (PD): 520 W (at 25°C)

Quality and Safety Features

MOSFET technology for high reliability and durability

Designed and manufactured to meet industry quality standards

Compatibility

Compatible with a wide range of power supply and power conversion applications

Application Areas

Switch-mode power supplies (SMPS)

Inverters and motor drives

Power factor correction (PFC) circuits

Uninterruptible power supplies (UPS)

Industrial and medical equipment

Product Lifecycle

Current production model, not nearing discontinuation

Replacements and upgrades available as needed

Several Key Reasons to Choose This Product

Exceptional performance and efficiency for high-power, high-frequency applications

Robust and reliable design for demanding operating conditions

Extensive compatibility and suitability for a wide range of power conversion applications

Availability of replacements and upgrades to ensure long-term support