Manufacturer Part Number
APT31N60BCSG
Manufacturer
Microsemi
Introduction
Discrete Semiconductor Product
Single MOSFET Transistor
Product Features and Performance
N-Channel MOSFET transistor
600V Drain-Source Voltage
31A Continuous Drain Current @ 25°C
100mΩ On-Resistance @ 18A, 10V
3055pF Input Capacitance @ 25V
255W Power Dissipation @ Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 100mΩ @ 18A, 10V
Continuous Drain Current (Id): 31A @ 25°C
Quality and Safety Features
TO-247-3 package for high-power applications
MOSFET technology for reliable performance
Compatibility
Suitable for high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial control systems
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power switching applications
Reliable performance and safety features
Compatibility with various industrial applications