PC28F640J3F75A - Micron Technology Inc.

Manufacturer Part Number

PC28F640J3F75A

Manufacturer

micron-technology

Introduction

The PC28F640J3F75A is part of Micron Technology's StrataFlash™ series, a high-performance 64Mbit NOR FLASH memory device designed for a wide range of applications requiring non-volatile memory storage.

Product Features and Performance

Non-Volatile FLASH Memory

64Mbit Memory Size

Memory Organization: 8M x 8, 4M x 16

Parallel Memory Interface for easy integration

Write Cycle Time Word, Page: 75ns

Fast Access Time: 75 ns

Operating Voltage Range: 2.7V ~ 3.6V

Operating Temperature Range: -40°C ~ 85°C

Surface Mount Technology in a 64-TBGA package

Product Advantages

High-density integration for substantial storage

Fast write and access times for efficient data handling

Flexible voltage and temperature specifications for diverse environmental conditions

Reliable data retention and endurance

Key Technical Parameters

Memory Type: FLASH NOR

Memory Size: 64Mbit

Access Time: 75 ns

Voltage Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Built with Micron's advanced manufacturing processes ensuring high reliability and performance

Compatibility

Support for Parallel interface allowing easy integration into a broad range of existing systems

Application Areas

Embedded Systems

Industrial Automation

Automotive Electronics

Consumer Electronics

Telecommunications

Product Lifecycle

Obsolete: This product is now considered obsolete, indicating it may no longer be produced or supported by Micron Technology, and availability may be limited. Customers are advised to consult for replacements or upgrades.

Several Key Reasons to Choose This Product

High-density storage capacity of 64Mbit for extensive memory needs

Fast access and write cycle times facilitating efficient data management

Wide operating temperature and voltage range compatible with diverse applications

Reliable performance backed by Micron Technology's manufacturing excellence

Though obsolete, its proven performance can still be suitable for specific legacy applications where high-reliability memory storage is required