Manufacturer Part Number
NAND256W3A2BNXE
Manufacturer
Micron Technology
Introduction
The NAND256W3A2BNXE is a 256Mbit NAND Flash memory chip providing non-volatile memory storage.
Product Features and Performance
Non-Volatile FLASH memory
Parallel memory interface for straightforward connectivity
256Mbit memory size for substantial storage capacity
Memory organized as 32M x 8 for efficient addressing
50 ns Write Cycle Time for rapid data management
50 ns Access Time enabling quick memory retrieval
Product Advantages
Surface Mount technology for a compact footprint
Effective for applications requiring high-density data storage
Robust operating temperature range from -40°C to 85°C
Supports a wide voltage supply range (2.7V - 3.6V) for diverse usage scenarios
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mbit
Memory Organization: 32M x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Tested for reliable performance in extreme temperature conditions
Compatibility
Parallel interface ensures compatibility with a range of microcontrollers and processors
The standard 48-TSOP I package is widely used in the industry
Application Areas
Ideal for embedded systems, consumer electronics, and communication devices requiring high-density, non-volatile storage
Product Lifecycle
Obsolete status indicates the product is no longer being manufactured or replenished
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
High-density storage solution in a small form factor
Tried and tested technology from a reputable manufacturer
Broad compatibility with existing hardware interfaces
Supports tough environmental conditions for various application needs
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