NAND01GW3B2CN6E - Micron Technology Inc.

Manufacturer Part Number

NAND01GW3B2CN6E

Manufacturer

Micron Technology

Introduction

Micron Technology's NAND flash memory for robust data storage in electronics

Product Features and Performance

1Gbit memory capacity

Flash memory technology

128M x 8 memory organization

Parallel memory interface

25ns write cycle time for word or page

25ns access time

Surface mount 48-TFSOP package

Product Advantages

High storage density for large data applications

Fast write and access times for quick memory operations

Durable and reliable storage solution

Key Technical Parameters

Non-Volatile memory type

Supply voltage between 2.7V and 3.6V

Operating temperature range from -40°C to 85°C

Quality and Safety Features

Built for harsh temperature environments

Industry-standard 48-TSOP packaging for reliable mounting

Compatibility

Compatible with systems using a parallel interface for non-volatile memory

Application Areas

Used in various electronic applications requiring robust flash storage

Product Lifecycle

Obsolete product status

Potential to seek replacements or upgrades for continuing applications

Several Key Reasons to Choose This Product

Ample storage capacity in a non-volatile format

Suitable for harsh environmental conditions

Fast access and write times to enhance system performance

Reliability and quality from Micron Technology, a well-established manufacturer in memory solutions