Manufacturer Part Number
NAND01GR3B2CZA6E
Manufacturer
Micron Technology
Introduction
The NAND01GR3B2CZA6E is a 1Gbit Non-Volatile FLASH memory device with a parallel interface, designed for high-speed and reliable data storage.
Product Features and Performance
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gbit
Memory Organization: 128M x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C to 85°C
Product Advantages
High storage capacity
Fast write cycle time and access time for quick data storage and retrieval
Wide operating temperature range suitable for various environments
Low voltage supply for energy efficiency
Key Technical Parameters
Memory Size: 1Gbit
Memory Interface: Parallel
Write Cycle Time: 25ns
Access Time: 25ns
Voltage - Supply: 1.7V ~ 1.95V
Quality and Safety Features
Temperature Range: -40°C ~ 85°C ensures reliable performance under extreme conditions
Compatibility
Interface: Compatible with devices requiring parallel memory interface
Application Areas
Used in applications requiring high-speed, reliable non-volatile memory storage.
Product Lifecycle
Product Status: Obsolete
Note: Check for potential replacement or upgrade options as this model is nearing discontinuation.
Several Key Reasons to Choose This Product
High capacity 1Gbit memory for substantial data storage
Fast 25ns access and write times for efficient operation
Low voltage operation enhancing energy conservation
Robust operating temperature range catering to extreme environments
Optimized for systems requiring reliable non-volatile memory storage
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