Manufacturer Part Number
MT49H32M18SJ-25E
B
Manufacturer
Micron Technology
Introduction
The MT49H32M18SJ-25E
B is a high-performance, low-power DRAM memory module from Micron Technology. This 576Mbit DRAM chip offers a parallel memory interface and operates at a clock frequency of 400 MHz, providing efficient and reliable data storage for a wide range of applications.
Product Features and Performance
Memory Type: Volatile DRAM
Memory Size: 576Mbit
Memory Organization: 32M x 18
Memory Interface: Parallel
Clock Frequency: 400 MHz
Access Time: 15 ns
Supply Voltage: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 95°C (TC)
Packaging: 144-TFBGA (18.5x11)
Product Advantages
High-performance DRAM with efficient parallel interface
Low-power design for power-sensitive applications
Wide operating temperature range for versatile usage
Compact and space-saving 144-TFBGA package
Key Reasons to Choose This Product
Reliable and high-quality DRAM from a trusted manufacturer
Excellent performance-to-power ratio for optimal system efficiency
Versatile compatibility and wide operating temperature range
Compact packaging for space-constrained designs
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and regulations
Compatibility
Compatible with a wide range of electronic devices and systems that require high-performance DRAM memory
Application Areas
Suitable for a variety of applications, including computing, industrial, automotive, and consumer electronics
Product Lifecycle
The MT49H32M18SJ-25E:B is an obsolete product, and Micron Technology may no longer manufacture or actively support this specific model. Customers are advised to contact our website's sales team to explore alternative or equivalent memory solutions that may better suit their current needs.
MT49H32M18FM-25AMICR011