Manufacturer Part Number
MT49H32M18CSJ-18
B
Manufacturer
Micron Technology
Introduction
This is a high-performance DRAM (Dynamic Random Access Memory) integrated circuit manufactured by Micron Technology.
Product Features and Performance
576Mbit (32M x 18) memory capacity
7V ~ 1.9V operating voltage
533 MHz clock frequency
15 ns access time
Parallel memory interface
Wide operating temperature range of 0°C to 95°C (TC)
Product Advantages
High-density and high-speed memory solution
Low power consumption
Wide temperature range for diverse applications
Reliable and durable performance
Key Technical Parameters
Memory Type: Volatile DRAM
Package: 144-FBGA (18.5x11)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: Tray
Compatibility
This DRAM module is designed to be compatible with various electronic devices and systems that require high-performance, high-density memory.
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Computing devices
Consumer electronics
Product Lifecycle
This DRAM module is a current production item and is not nearing discontinuation. Replacement and upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High memory capacity and performance
Low power consumption
Wide operating temperature range
Reliable and durable construction
RoHS3 compliance for environmental safety
MT49H32M18FM-25:AMICR011