Manufacturer Part Number
MT48LC8M16LFF4-8:G
Manufacturer
micron-technology
Introduction
The MT48LC8M16LFF4-8:G is a high-performance, low-power SDRAM (Synchronous Dynamic Random Access Memory) module designed for mobile and embedded applications. It offers a compact 54-VFBGA package and is optimized for low-power operation, making it an ideal choice for portable devices and systems with limited power budgets.
Product Features and Performance
128Mbit memory capacity organized as 8M x 16
Parallel memory interface
125MHz clock frequency
7ns access time
15ns write cycle time
3V to 3.6V operating voltage
0°C to 70°C operating temperature range
Surface mount package
Product Advantages
Low power consumption for extended battery life in mobile devices
Compact 54-VFBGA package for space-constrained designs
Reliable and stable performance in a wide range of operating conditions
Optimal balance of speed, capacity, and power efficiency
Key Reasons to Choose This Product
Proven reliability and performance from a trusted manufacturer
Excellent power efficiency for extended battery life in portable devices
Compatibility with a wide range of mobile and embedded systems
Cost-effective solution for memory requirements in various applications
Quality and Safety Features
Rigorous quality control and testing procedures
Compliance with industry standards and regulations
Robust design for reliable operation in diverse environments
Compatibility
The MT48LC8M16LFF4-8:G is compatible with a variety of mobile and embedded systems that require low-power, high-performance SDRAM memory.
Application Areas
Smartphones and tablets
Portable media players
Handheld gaming devices
Industrial and medical equipment
Automotive infotainment systems
Product Lifecycle
The MT48LC8M16LFF4-8:G is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from other memory manufacturers. Customers are advised to contact our website's sales team for more information on available options and potential replacements.