Manufacturer Part Number
MT47H64M8CF-25E:G
Manufacturer
Micron Technology
Introduction
The MT47H64M8CF-25E:G is a high-speed dynamic random-access memory (DRAM) component used in a variety of computer and electronic applications.
Product Features and Performance
Volatile memory type indicating the need for power to maintain stored information
DDR2 SDRAM technology provides improved performance over previous DDR technology
512Mbit memory size for moderate data storage capacity
64M x 8 memory organization for efficient data management and retrieval
Parallel memory interface allows for quick data transfer and communication with other components
400 MHz clock frequency supports fast data processing capabilities
15ns write cycle time enables quick writing of data to memory
400 ps access time for rapid data access and retrieval
7V to 1.9V voltage supply compatibility ensures low power consumption
Surface mount 60-TFBGA package for compact PCB design
Suitable for operating temperatures ranging from 0°C to 85°C (TC)
Product Advantages
Optimized for high-speed signal processing
Low latency and fast access time beneficial for performance-critical applications
Key Technical Parameters
Memory Size: 512Mbit
Memory Organization: 64M x 8
Clock Frequency: 400 MHz
Write Cycle Time: 15ns
Access Time: 400 ps
Voltage Supply Range: 1.7V to 1.9V
Operating Temperature Range: 0°C to 85°C
Quality and Safety Features
Operates within the standard industrial temperature range
Constructed using reliable SDRAM technology from Micron
Compliance with rigorous industry standards for memory products
Compatibility
Supports a variety of high-speed digital applications requiring DDR2 SDRAM memory
Can be integrated into systems that accept 60-TFBGA mounted components
Application Areas
High-performance computing
Networking and telecommunications
Gaming consoles
Servers and data centers
Product Lifecycle
Obsolete status indicating the product is no longer being manufactured by Micron
Potential availability of replacements or upgrades through Micron's newer product lines
Several Key Reasons to Choose This Product
Built with Micron Technology's reliable memory construction
DDR2 SDRAM provides a balance between performance and cost
512Mbit density suitable for a range of applications without being excessively large
60-FBGA package suited for space-constrained designs
Operational up to 85°C, making it suitable for various industrial applications
Quick data transfer with 400 MHz clock frequency and 15ns write cycle time for demanding tasks
Compliance with industry standards ensures compatibility and reliability
MT47H64M4BP-37EMicron Technology