MT47H512M8WTR-25E:C - Micron Technology Inc.

Manufacturer Part Number

MT47H512M8WTR-25E:C

Manufacturer

Micron Technology

Introduction

The MT47H512M8WTR-25E:C is a high-speed DDR2 SDRAM memory module designed for applications requiring large volumes of data storage and high-speed data processing.

Product Features and Performance

4 Gbit memory size

DDR2 SDRAM technology

512M x 8 memory organization

Parallel memory interface

400 MHz clock frequency

15 ns write cycle time for word or page

400 ps access time

Product Advantages

High data storage capacity

Fast data transfer and processing speeds

Efficient power usage with a supply voltage between 1.7V to 1.9V

Key Technical Parameters

Memory Type: Volatile

Memory Format: DRAM

Technology: SDRAM - DDR2

Clock Frequency: 400 MHz

Voltage - Supply: 1.7V ~ 1.9V

Operating Temperature: 0°C ~ 85°C (TC)

Quality and Safety Features

Operates within a supply voltage range of 1.7V to 1.9V for energy efficiency

Suitable for operating temperatures ranging from 0°C to 85°C

Compatibility

Compatible with systems requiring DDR2 SDRAM memory with a parallel interface

Application Areas

High-performance computing

Data centers

Large-scale servers

Complex data processing units

Product Lifecycle

Status: Obsolete

Replacement or upgrades may not be available, suggesting the need to consider newer memory technologies for future applications.

Several Key Reasons to Choose This Product

High-speed memory interface suitable for advanced computing systems

Large memory size ideal for data-intensive applications

Operational across a broad range of temperatures, enhancing reliability

Obsolete status which might be suitable for maintaining or repairing existing older products that use this specific memory device.