Manufacturer Part Number
MT47H256M8EB-25E:C
Manufacturer
Micron Technology
Introduction
High-speed DDR2 SDRAM component designed for advanced computing applications.
Product Features and Performance
Volatile memory with 2Gbit density
Organized as 256M x 8 for efficient data management
Parallel memory interface enabling faster data throughput
SDRAM - DDR2 technology for higher bandwidth over DDR
400 MHz clock frequency for quick access to data
Surface mount 60-TFBGA package for compact PCB design
Product Advantages
Low WRITE cycle time of 15ns for rapid data handling
Fast access time of 400 ps enhancing system responsiveness
Broad operating temperature range from 0°C to 85°C suitable for various environments
Supply voltage range of 1.7V to 1.9V for energy-efficient operations
Key Technical Parameters
Memory Size: 2Gbit
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Organization: 256M x 8
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C
Quality and Safety Features
Robust build for reliable performance
Compliance with standard safety regulations for electronic components
Compatibility
Compatible with systems and devices requiring DDR2 SDRAM technology
Application Areas
Advanced computer systems
High-performance computing servers
Telecommunication infrastructure
Gaming consoles
Industrial computing platforms
Product Lifecycle
Active product status indicates ongoing manufacturing and availability
Not nearing discontinuation, ensuring long-term availability
Replacement and upgrade options available as needed
Several Key Reasons to Choose This Product
Micron's industry-led reliability and performance
Efficient data management with large 2Gbit memory density
High-speed operation aligns with demanding computing tasks
Broad compatibility with various advanced electronic systems
Proven track record in diverse application areas ensuring versatility
Active lifecycle status ensures sustained support and supply
