MT46H128M16LFB7-6 WT:B - Micron Technology Inc.

Manufacturer Part Number

MT46H128M16LFB7-6 WT

B

Manufacturer

Micron Technology

Introduction

The MT46H128M16LFB7-6 WT:B is a high-performance, low-power LPDDR SDRAM memory chip from Micron Technology. It offers a memory capacity of 2Gbit organized in a 128M x 16 configuration, making it suitable for a wide range of mobile and embedded applications.

Product Features and Performance

SDRAM Mobile LPDDR technology

Memory capacity of 2Gbit

Memory organization of 128M x 16

Parallel memory interface

Clock frequency of 166 MHz

Write cycle time of 15ns

Access time of 5ns

Operating voltage range of 1.7V to 1.95V

Operating temperature range of -25°C to 85°C

Product Advantages

High-performance memory solution for mobile and embedded devices

Low-power operation for extended battery life

Reliable and stable performance in a wide range of operating conditions

Key Reasons to Choose This Product

Proven reliability and quality from a leading memory manufacturer

Optimized for power-sensitive mobile and embedded applications

Excellent performance-to-power ratio for improved system efficiency

Compatibility with a wide range of mobile and embedded platforms

Quality and Safety Features

Rigorous quality control and testing processes

Compliance with industry standards and safety regulations

Compatibility

The MT46H128M16LFB7-6 WT:B is compatible with a wide range of mobile and embedded systems that require high-performance, low-power LPDDR SDRAM memory.

Application Areas

Smartphones and tablets

Portable media players

Automotive electronics

Industrial and IoT devices

Wearable electronics

Product Lifecycle

The MT46H128M16LFB7-6 WT:B is currently in the obsolete phase. Customers are advised to contact our website's sales team for information on available equivalent or alternative memory solutions that may suit their specific requirements.