Manufacturer Part Number
MT41K512M8RG-093:N
Manufacturer
Micron Technology
Introduction
High-capacity DRAM module from Micron Technology designed for advanced memory solutions requiring DDR3L SDRAM technology.
Product Features and Performance
Volatile memory type for temporary data storage
DDR3L SDRAM technology with a memory size of 4Gbit
Memory organization of 512M x 8 provides substantial data bandwidth
Parallel memory interface for traditional memory communication
Clock frequency of 1.066 GHz for speedy data transfer rates
Access time of 20 ns allowing quick memory reads and writes
Surface Mount 78-TFBGA package suited for compact PCB designs
Product Advantages
Efficiency of DDR3L technology with lower voltage usage
High memory capacity suitable for demanding applications
Enhanced data rate for improved overall system performance
Key Technical Parameters
4Gbit memory size
066 GHz clock frequency
Parallel memory interface
20 ns access time
283V to 1.45V supply voltage range
512M x 8 memory organization
Quality and Safety Features
Operating temperature range of 0°C to 95°C ensures reliability across various environments
Complies with standard quality and safety regulations for DRAM modules
Compatibility
Compatible with electronic systems designed to utilize DDR3L SDRAM
Surface mountable on 78-TFBGA footprint
Application Areas
Suitable for use in computing, networking, and telecommunications systems
Product Lifecycle
Obsolete product status
Users should seek replacements or upgrades for future designs
Key Reasons to Choose This Product
High-speed data processing capability due to 1.066 GHz frequency
Large 4Gbit size ideal for memory-intensive operations
Low-power DDR3L technology for energy-efficient designs
Broad compatibility with existing DDR3L systems
Support for a wide operating temperature range providing reliability under varying conditions
