Manufacturer Part Number
MT29F4G16ABADAWP
D
Manufacturer
Micron Technology
Introduction
High-performance NAND flash memory device
Product Features and Performance
4Gbit (256M x 16) memory capacity
Parallel memory interface
Non-volatile memory technology
Operating voltage range: 2.7V to 3.6V
Operating temperature range: 0°C to 70°C
Product Advantages
High density and capacity
Low power consumption
Wide operating temperature range
Reliable and durable performance
Key Technical Parameters
Memory size: 4Gbit
Memory organization: 256M x 16
Memory interface: Parallel
Memory technology: NAND flash
Operating voltage: 2.7V to 3.6V
Operating temperature: 0°C to 70°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Compatible with a variety of electronic devices and systems that require high-capacity non-volatile memory
Application Areas
Suitable for use in various electronic devices and systems, such as:
- Smartphones
- Tablets
- Laptops
- Industrial and embedded systems
- Data storage and backup applications
Product Lifecycle
Currently available and actively supported by the manufacturer
No information on discontinuation or availability of replacements or upgrades
Several Key Reasons to Choose This Product
High memory capacity of 4Gbit
Wide operating voltage and temperature ranges
Reliable and durable performance
RoHS3 compliance for environmental safety
Compatibility with a variety of electronic devices and systems
MT29F4G08BABWPMicron Technology