Manufacturer Part Number
MT29F4G08ABAEAH4:E
Manufacturer
Micron Technology
Introduction
The MT29F4G08ABAEAH4:E is a 4Gbit NAND Flash memory device from Micron Technology offering robust non-volatile storage with parallel interface.
Product Features and Performance
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gbit
Memory Organization: 512M x 8
Memory Interface: Parallel
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package: 63-VFBGA
Device Package: 63-VFBGA (9x11)
Product Advantages
High-density 4Gbit storage
Robust surface mount 63-VFBGA package
Wide operating temperature range suitable for various environments
Key Technical Parameters
Memory Size: 4Gbit
Memory Organization: 512M x 8
Voltage Supply Range: 2.7V to 3.6V
Operating Temperature Range: 0°C to 70°C
Quality and Safety Features
Strict adherence to quality standards ensuring reliability and durability
Tested rigorously across varied temperature ranges
Compatibility
Compatible with systems requiring high-density Non-Volatile NAND Flash memory with a parallel interface
Application Areas
Embedded systems
Consumer electronics
Storage systems
Communication systems
Product Lifecycle
Current Status: Last Time Buy
Notation regarding forthcoming discontinuation with suggestions to procure necessary units or look for suitable replacements/upgrades.
Several Key Reasons to Choose This Product
Large memory size (4Gbit) suitable for intensive data storage applications
Operating flexibility provided by wide operating temperature range
Surface mount package compatible with modern PCB designs
Optimal for designs demanding long-term, reliable non-volatile memory solutions
Reliable performance endorsed by Micron Technology’s standards
MT29F4G08ABAEAWP-ITEMicron Technology