Manufacturer Part Number
MT29F4G08ABADAWP-IT
D
Manufacturer
Micron Technology
Introduction
High-performance NAND flash memory device
Suitable for a wide range of applications, including consumer electronics, industrial equipment, and automotive systems
Product Features and Performance
4Gb NAND flash memory
Parallel memory interface
512M x 8 memory organization
7V to 3.6V operating voltage
-40°C to 85°C operating temperature range
Fast read/write speeds for efficient data access
Endurance and reliability for long-term use
Product Advantages
High storage capacity in a compact package
Wide operating temperature range for versatile applications
Low power consumption for energy-efficient operation
Robust performance and reliability for industrial-grade applications
Key Technical Parameters
Memory Size: 4Gbit
Memory Interface: Parallel
Memory Organization: 512M x 8
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Rigorous quality control and testing for reliable performance
Compatibility
Suitable for a variety of electronic devices and systems that require high-capacity, parallel NAND flash memory
Application Areas
Consumer electronics (e.g., smartphones, tablets, digital cameras)
Industrial equipment (e.g., industrial controllers, automation systems)
Automotive applications (e.g., infotainment systems, engine control units)
Product Lifecycle
Current product offering, no known discontinuation or replacement plans
Several Key Reasons to Choose This Product
High storage capacity for data-intensive applications
Robust performance and reliability for industrial and automotive use cases
Wide operating temperature range for versatile deployment
Low power consumption for energy-efficient operation
RoHS3 compliance for environmental responsibility
MT29F4G08ABADAWP-IT:DTRMicron Technology
MT29F4G08ABADAH4:DMicron Technology Inc.IC FLASH 4GBIT PARALLEL 63VFBGA