Manufacturer Part Number
MT29F2T08CUHBBM4-3R:B
Manufacturer
Micron Technology
Introduction
The MT29F2T08CUHBBM4-3R:B is a 2Tbit FLASH memory component from Micron Technology, leveraging NAND technology for non-volatile storage solutions.
Product Features and Performance
Non-Volatile FLASH Memory
Utilizes NAND Technology
Large Memory Size of 2Tbit
Organized as 256G x 8 for extensive data storage capacity
Parallel Memory Interface for efficient data transfer
Clock Frequency of up to 333 MHz, enhancing data processing speed
Supports a Voltage Supply range from 2.5V to 3.6V
Operable within a temperature range of 0°C to 70°C
Product Advantages
High storage capacity suitable for intense data requirements
Reliable non-volatile memory retains data without power
Flexible voltage supply options for varied application needs
Compatible with systems requiring high-speed memory access
Key Technical Parameters
Memory Size: 2Tbit
Memory Organization: 256G x 8
Memory Interface: Parallel
Clock Frequency: 333 MHz
Voltage Supply: 2.5V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Manufactured by Micron Technology, a leader in memory and storage solutions
Designed for reliability in a wide range of operating conditions
Compatibility
Designed for use in applications requiring high-capacity and durable non-volatile memory
Parallel interface ensures compatibility with a wide range of legacy and contemporary systems
Application Areas
Ideal for use in high-performance computing systems
Suitable for data center storage solutions
Can be utilized in advanced consumer electronics requiring extensive data storage
Product Lifecycle
Status: Obsolete
Note: As this product is now obsolete, customers should seek replacements or upgrades. Micron Technology may provide alternative solutions.
Several Key Reasons to Choose This Product
Exceptionally high memory capacity (2Tbit) suitable for data-intensive applications
Reliability and quality assurance from Micron Technology, a trusted name in memory solutions
Supports a broad operating temperature range, ensuring performance in various environments
High clock frequency (333 MHz) enables faster data access and processing
Versatility in application makes it a suitable choice for a wide range of high-capacity memory needs