Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Manufacturer
Micron Technology
Introduction
The MT29F2G16ABBEAH4-IT:E is a 2Gbit NAND Flash memory module from Micron Technology designed for storage solutions requiring high-density, non-volatile memory.
Product Features and Performance
Non-Volatile FLASH memory
Memory Size: 2Gbit
Memory Organization: 128M x 16 for efficient data management
Parallel Memory Interface for straightforward integration
Operates across a wide voltage range of 1.7V to 1.95V
Supports operating temperatures from -40°C to 85°C, ensuring reliability in varied environments
Surface Mount 63-VFBGA package for compact integration
Product Advantages
High-density storage solution facilitates ample data storage in limited space.
The parallel interface provides a simple, efficient connection to host devices.
Broad operating temperature range enhances device reliability in extreme conditions.
Non-volatile storage ensures data is preserved without power.
Key Technical Parameters
Memory Type: FLASH NAND
Memory Size: 2Gbit
Voltage Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Package: 63-VFBGA
Quality and Safety Features
Engineered to meet rigorous Micron quality standards.
Built for robust performance in challenging conditions.
Compatibility
The parallel interface and standard VFBGA package ensure compatibility with a wide range of host devices.
Application Areas
Ideal for embedded systems, IoT devices, and mobile applications requiring high-density, reliable storage.
Product Lifecycle
This product is currently marked as Obsolete, indicating it is either near its discontinuation or no longer available for new designs.
Customers are encouraged to contact Micron for information on replacements or upgrades.
Several Key Reasons to Choose This Product
High-density memory provides substantial storage capacity.
Reliable operation in a wide range of temperatures.
Non-volatile memory ensures data preservation.
Straightforward integration into existing systems.
Part of Micron's well-regarded portfolio of memory products.