Manufacturer Part Number
MT29F2G08ABBEAH4:E
Manufacturer
Micron Technology
Introduction
MT29F2G08ABBEAH4:E is a NAND Flash memory device providing a storage solution for embedded systems.
Product Features and Performance
Non-Volatile FLASH memory
2Gbit memory size
256M x 8 memory organization
Parallel memory interface
Designed for high-density data storage
Product Advantages
High capacity storage
Low power consumption
Durable solid-state design
Easy to integrate into system designs
Key Technical Parameters
Memory Size: 2Gbit
Organization: 256M x 8
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C
Package: 63-VFBGA (9x11)
Quality and Safety Features
Extended temperature range for reliability
Robust storage solution with FLASH technology
Manufactured by Micron Technology, known for quality memory products
Compatibility
Compatible with designs requiring parallel interface NAND Flash memory
Application Areas
Embedded systems
Consumer electronics
Data storage applications
Product Lifecycle
Obsolete status
May need to consider replacements or upgrades
Key Reasons to Choose This Product
Large storage capacity in a compact form factor
Reliable data retention and endurance
Suitable for a wide range of temperature environments
Manufactured by a leading memory technology company
MT29F2G08ABDHC-ETDMicron Technology
MT29F2G08ABBGAH4-IT:GMicron Technology Inc.IC FLASH 2GBIT PARALLEL 63VFBGA