Manufacturer Part Number
MT29F2G08ABAEAWP-E:E
Manufacturer
micron-technology
Introduction
The MT29F2G08ABAEAWP-E:E is a 2Gbit NAND Flash Memory designed for high-density, high-performance storage solutions.
Product Features and Performance
Non-Volatile FLASH Memory
2Gbit Memory Size with a 256M x 8 Organization
Parallel Memory Interface for simplified integration
Supported by NAND Technology for efficient data storage
Operating voltage ranges from 2.7V to 3.6V
Operates within a temperature range of 0°C to 70°C
Product Advantages
Large storage capacity for extensive data storage needs
High reliability and endurance for NAND technology
Broad operating voltage suitable for various applications
Adequate operating temperature range for standard operational environments
Key Technical Parameters
Memory Size: 2Gbit
Memory Organization: 256M x 8
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Parallel Memory Interface
Quality and Safety Features
Manufactured by micron-technology, ensuring high-quality and reliability
Designed for robust performance in a wide range of environments and applications
Compatibility
Parallel interface allows for easy integration into existing systems
Suitable for applications requiring large data storage and fast access
Application Areas
Mobile devices
Digital cameras
MP3 players
Solid-State Drives (SSDs)
Other applications requiring high-density flash storage
Product Lifecycle
Obsolete status indicating the product is nearing discontinuation
Replacement or upgrade options might be available, suggesting users to look for newer versions or alternatives
Several Key Reasons to Choose This Product
High storage capacity suitable for demanding storage requirements
Supported by micron-technology, a leader in memory and storage solutions
Suitable for a wide range of operating conditions
Provides a reliable solution for high-density storage needs
Easy integration with existing systems due to its parallel interface and wide voltage compatibility
MT29F2G08ABAEAWPMicron Technology