Manufacturer Part Number
MT29F2G08ABAEAH4-IT:E
Manufacturer
Micron Technology
Introduction
The MT29F2G08ABAEAH4-IT:E from Micron Technology is a high-performance 2Gbit NAND FLASH memory device designed for high-speed and reliable data storage.
Product Features and Performance
Non-Volatile FLASH memory
Memory Size: 2Gbit
Organization: 256M x 8
Parallel memory interface
Surface Mount 63-VFBGA package
Operates across voltage range 2.7V to 3.6V
Suitable for high-speed applications due to robust data integrity and retention
Product Advantages
Extended temperature range from -40°C to 85°C supporting industrial applications
Enhanced durability and long operational lifespan
Key Technical Parameters
Memory Type: FLASH - NAND
Memory Format: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Built to endure extreme environments and temperatures
Complies with rigorous industry safety and quality standards
Compatibility
Designed for broad compatibility with a variety of advanced microcontrollers and processors in the market
Application Areas
Industrial automation
Automotive electronics
Networking and telecommunications
Consumer electronics
Product Lifecycle
Status: Active
Regularly updated and maintained, with availability of replacements and potential future upgrades
Several Key Reasons to Choose This Product
Reliable data storage and retrieval in extreme conditions
Ample storage capacity of 2Gbit with efficient organization
Low power consumption and wide voltage range compatibility for diverse applications
Robust FLASH technology from a leading global semiconductor manufacturer
High compatibility with multiple device platforms ensuring seamless integration
MT29F2G08ABAEAMicron Technology