MT29F1G16ABBEAH4:E - Micron Technology Inc.

Manufacturer Part Number

MT29F1G16ABBEAH4:E

Manufacturer

Micron Technology

Introduction

The MT29F1G16ABBEAH4:E is a 1Gbit NAND Flash memory device designed for high-density data storage solutions with a parallel memory interface, produced by Micron Technology.

Product Features and Performance

Non-Volatile FLASH Memory

Memory Size: 1Gbit

Memory Format: NAND

Memory Organization: 64M x 16

Parallel Memory Interface

Surface Mount, 63-VFBGA Package

Operating Temperature Range: 0°C ~ 70°C

Product Advantages

High-density data storage capability

Stable data retention with non-volatile memory

Compact and efficient packaging in a 63-VFBGA

Key Technical Parameters

Memory Size: 1Gbit

Memory Organization: 64M x 16

Voltage Supply: 1.7V ~ 1.95V

Operating Temperature: 0°C ~ 70°C (TA)

Quality and Safety Features

Robust design adhering to industry standards for quality and reliability

Operates effectively within a standard temperature range ensuring device stability

Compatibility

Compatible with systems requiring high-density NAND flash memory with a parallel interface

Application Areas

High-density data storage systems

Digital media applications

Embedded computing systems

Product Lifecycle

Obsolete status indicating discontinuation

Users should consider seeking replacements or upgrade alternatives

Several Key Reasons to Choose This Product

High storage capacity of 1Gbit suited for intensive data storage needs

Reliable data retention with non-volatile NAND technology

Suitable for diverse applications with a standard operating temperature range

Compact VFBGA package facilitates easy integration into various system designs