MT29F1G08ABBEAH4:E - Micron Technology Inc.

Manufacturer Part Number

MT29F1G08ABBEAH4:E

Manufacturer

Micron Technology

Introduction

The MT29F1G08ABBEAH4:E by Micron Technology is a 1Gbit NAND Flash memory device offering high-density data storage.

Product Features and Performance

Non-Volatile memory retains data without power

FLASH NAND technology for reliable data storage

1Gbit memory size for substantial data capacity

128M x 8 memory organization optimizes data management

Parallel memory interface for efficient data transfer

Supports operating temperature range from 0°C to 70°C

Surface Mount 63-VFBGA package for compact integration

Product Advantages

High-density storage solution

Reliable data retention with non-volatile NAND Flash

Efficient data management and transfer

Wide operating temperature range for versatility in use

Compact footprint for space-sensitive applications

Key Technical Parameters

Memory Size: 1Gbit

Memory Organization: 128M x 8

Memory Interface: Parallel

Voltage Supply: 1.7V ~ 1.95V

Operating Temperature: 0°C ~ 70°C (TA)

Package: 63-VFBGA

Quality and Safety Features

Robust construction for reliable long-term storage

NAND technology enhances endurance and data integrity

Compatibility

Parallel interface for broad compatibility with microcontrollers and processors

Application Areas

Consumer electronics

Communication devices

Digital cameras and media players

Data logging and storage applications

Product Lifecycle

Obsolete - Consider options for replacement or upgrade due to obsolescence.

Several Key Reasons to Choose This Product

High storage capacity ideal for dense data applications

Reliable NAND Flash technology ensures data integrity

Versatile operating conditions support a broad range of applications

Compact form factor facilitates integration into space-constrained designs