Manufacturer Part Number
MT29F1G08ABBEAH4:E
Manufacturer
Micron Technology
Introduction
The MT29F1G08ABBEAH4:E by Micron Technology is a 1Gbit NAND Flash memory device offering high-density data storage.
Product Features and Performance
Non-Volatile memory retains data without power
FLASH NAND technology for reliable data storage
1Gbit memory size for substantial data capacity
128M x 8 memory organization optimizes data management
Parallel memory interface for efficient data transfer
Supports operating temperature range from 0°C to 70°C
Surface Mount 63-VFBGA package for compact integration
Product Advantages
High-density storage solution
Reliable data retention with non-volatile NAND Flash
Efficient data management and transfer
Wide operating temperature range for versatility in use
Compact footprint for space-sensitive applications
Key Technical Parameters
Memory Size: 1Gbit
Memory Organization: 128M x 8
Memory Interface: Parallel
Voltage Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Package: 63-VFBGA
Quality and Safety Features
Robust construction for reliable long-term storage
NAND technology enhances endurance and data integrity
Compatibility
Parallel interface for broad compatibility with microcontrollers and processors
Application Areas
Consumer electronics
Communication devices
Digital cameras and media players
Data logging and storage applications
Product Lifecycle
Obsolete - Consider options for replacement or upgrade due to obsolescence.
Several Key Reasons to Choose This Product
High storage capacity ideal for dense data applications
Reliable NAND Flash technology ensures data integrity
Versatile operating conditions support a broad range of applications
Compact form factor facilitates integration into space-constrained designs
MT29F1G08ABBDAH4DMicron Technology