Manufacturer Part Number
MT29F1G08ABAEAH4-ITX:E
Manufacturer
Micron Technology
Introduction
The MT29F1G08ABAEAH4-ITX:E is a NAND FLASH memory device designed for high-capacity data storage and intensive read/write operations.
Product Features and Performance
Non-Volatile FLASH Memory
Memory Size: 1Gbit
Memory Organization: 128M x 8
Memory Interface: Parallel
Technology based on FLASH - NAND
Product Advantages
High data retention capability
Robust storage solution for intensive use
Compact 63-VFBGA package for space-sensitive applications
Key Technical Parameters
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Surface Mountable
Quality and Safety Features
Operates reliably across extreme temperature ranges
Compatibility
Designed to interface seamlessly with devices requiring high-volume data storage
Application Areas
Suitable for consumer electronics, networking, and telecommunications equipment requiring large, non-volatile memory
Product Lifecycle
Obsolete
Limited availability with no direct replacements or upgrades
Several Key Reasons to Choose This Product
Scalable 1Gbit Storage Capacity for significant data handling
Parallel memory interface ensuring efficient data transfer
Rugged operating temperature range ensuring performance in varied environmental conditions
Compact and space-efficient packaging suitable for modern electronic devices
MT29F1G08ABAEAH4-ITXMicron Technology
MT29F1G08ABAEAWPMICROM
MT29F1G08ABADAWPDMicrel / Microchip Technology