MT29F1G08ABADAH4-ITX:D - Micron Technology Inc.

Manufacturer Part Number

MT29F1G08ABADAH4-ITX:D

Manufacturer

Micron Technology

Introduction

This is a Micron Technology NAND flash memory integrated circuit (IC) with a storage capacity of 1 gigabit (Gbit).

Product Features and Performance

High-density NAND flash memory

1Gbit storage capacity

128M x 8 memory organization

Parallel memory interface

RoHS3 compliant

Operating temperature range of -40°C to 85°C

Product Advantages

Reliable and durable non-volatile memory

High storage density

Wide operating temperature range

RoHS3 compliance for environmental friendliness

Key Technical Parameters

Voltage supply: 2.7V to 3.6V

Package: 63-VFBGA (9x11)

Surface mount packaging

FLASH NAND technology

Quality and Safety Features

Rigorous quality control and testing

RoHS3 compliant for reduced hazardous substances

Compatibility

Compatible with a wide range of electronic devices and systems

Application Areas

Suitable for use in various embedded systems, consumer electronics, and industrial applications that require high-density, non-volatile memory

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options available from Micron Technology

Several Key Reasons to Choose This Product

High storage capacity of 1Gbit

Wide operating temperature range of -40°C to 85°C

Surface mount packaging for easy integration

RoHS3 compliance for environmental responsibility

Reliable and durable non-volatile memory technology

Compatibility with a wide range of applications