MT25QL02GCBB8E12-0SIT - Micron Technology Inc.

Manufacturer Part Number

MT25QL02GCBB8E12-0SIT

Manufacturer

Micron Technology

Introduction

The MT25QL02GCBB8E12-0SIT is a high-performance 2Gbit FLASH memory device utilizing NOR technology, designed for high-speed and reliable data storage.

Product Features and Performance

Memory Type: Non-Volatile

Memory Format: FLASH

Technology: FLASH - NOR

Memory Size: 2Gbit

Memory Organization: 256M x 8

Memory Interface: SPI - Quad I/O

Clock Frequency: 133 MHz

Write Cycle Time - Word, Page: 8ms, 2.8ms

Operating Temperature Range: -40°C to 85°C

Mounting Type: Surface Mount

Package: 24-TBGA

Product Advantages

High storage capacity of 2Gbit

Robust temperature range ensuring reliability in varied environments

Fast data transfer speeds utilizing the Quad SPI interface

Low power consumption with a supply voltage range of 2.7V to 3.6V

Key Technical Parameters

Clock Frequency: 133 MHz

Write Cycle Time: Word - 8ms, Page - 2.8ms

Voltage Supply: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Memory Interface: SPI - Quad I/O

Quality and Safety Features

Compliant with rigorous safety and quality standards

Constructed for high-reliability and longevity in harsh environments

Designed for secure data retention and robust operation

Compatibility

Compatible with systems requiring high-speed, non-volatile memory with a SPI interface

Application Areas

Embedded systems

Consumer electronics

Internet of Things devices

Automotive applications

Industrial automation

Product Lifecycle

Current Status: Active

Not nearing discontinuation and replacements or upgrades are readily available

Several Key Reasons to Choose This Product

Large memory capacity combined with high performance and reliability

Efficient data handling thanks to Quad SPI interface

Designed for versatility across a wide range of temperatures and applications

Optimal power usage fitting the needs of mobile and energy-conscious devices

Proven track record of quality from a leading manufacturer in the memory sector