Manufacturer Part Number
M29W800DB70N6E
Manufacturer
Micron Technology
Introduction
High-performance NOR flash memory device
Product Features and Performance
8Mbit of non-volatile memory
Parallel interface
Fast access time of 70ns
Wide operating temperature range of -40°C to 85°C
Low operating voltage of 2.7V to 3.6V
Reliable FLASH technology
Sector erase and byte/word programmable
Product Advantages
High-density memory capacity
Fast read and write speeds
Wide temperature range for diverse applications
Low power consumption
Durable and reliable non-volatile storage
Key Technical Parameters
Memory Size: 8Mbit
Memory Organization: 1M x 8, 512K x 16
Access Time: 70ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
Reliable FLASH technology
Rigorous quality control and testing
Compatibility
48-TSOP I package
Surface mount design
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Consumer electronics
Automotive electronics
Product Lifecycle
Currently in production
Continued availability and support from Micron Technology
Key Reasons to Choose This Product
High-density, non-volatile memory capacity
Fast access and write speeds
Wide operating temperature range
Low power consumption
Reliable and durable FLASH technology
RoHS3 compliance for environmental safety
Compatibility with various surface mount applications