Manufacturer Part Number
M29W640GT70NA6E
Manufacturer
Micron Technology
Introduction
High-performance parallel NOR flash memory solution
Ideal for embedded applications requiring high-density non-volatile storage
Product Features and Performance
64Mbit (8M x 8, 4M x 16) memory capacity
70ns access time
Parallel interface
7V to 3.6V operating voltage
Wide operating temperature range: -40°C to 85°C
Product Advantages
High-density non-volatile storage
Fast access and write speeds
Low power consumption
Reliable operation across wide temperature range
Key Technical Parameters
Memory Type: NOR Flash
Memory Size: 64Mbit
Memory Interface: Parallel
Access Time: 70ns
Write Cycle Time: 70ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
48-TSOP I package
Compatibility
Suitable for embedded applications requiring high-density non-volatile storage
Application Areas
Automotive electronics
Industrial control systems
Telecommunications equipment
Medical devices
Consumer electronics
Product Lifecycle
This product is an active part and not nearing discontinuation
Replacement or upgrade options are available from Micron Technology
Key Reasons to Choose This Product
High-density 64Mbit storage capacity
Fast access and write speeds for efficient performance
Wide operating temperature range for reliable operation in diverse environments
Low power consumption for energy-efficient designs
RoHS3 compliant for environmental compliance
Proven reliability and quality from Micron Technology